2SC2539 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.circuit diagram:
L1: 2T Coil diameter:4mm
L2: in series 6pcs Toroidal ring
L3: 4T Coil diameter:10mm
L1: 3T Coil diameter:10mm
FEATURES
High power gain: Gpe >= 14.5 dB at Vcc=13.5V, Pout = 14W and f=175MHz
Emitter ballasted construction and gold metallization for high reliability and good performances
Low thermal resistance ceramic package with flange
Ability of withstanding more than 20:1 load VSWR when operated at Vcc=15.2V, Pout=18W, f=175MHz, Tc=250C
Download the datasheet of RF Power Transistor 2SC2539 thank you for the circuit
No comments:
Post a Comment